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HGTP12N60D1 Datasheet, Intersil Corporation

HGTP12N60D1 Datasheet, Intersil Corporation

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HGTP12N60D1 igbt equivalent

  • n-channel igbt.
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HGTP12N60D1 Features and benefits

HGTP12N60D1 Features and benefits


* 12A, 600V
* Latch Free Operation
* Typical Fall Time <500ns
* High Input Impedance
* Low Conduction Loss www.DataSheet4U.com Description The IGBT i.

HGTP12N60D1 Application

HGTP12N60D1 Application

operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies an.

HGTP12N60D1 Description

HGTP12N60D1 Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-.

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TAGS

HGTP12N60D1
N-Channel
IGBT
Intersil Corporation

Manufacturer


Intersil Corporation

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